FDFME2P823ZT diode equivalent, integrated p-channel powertrench mosfet and schottky diode.
General Description
* Max rDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A
* Max rDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8 A
* Max rDS(on) = 331 mΩ at VGS = .
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